IPB011N04NG Infineon MOS场效应管 40V 180A _MOS场效应管_晶体管_分立半导体

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制造商：Infineon

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IPB011N04NG Infineon MOS场效应管 40V 180A IPB011N04NG Infineon MOS场效应管 40V 180A

本店价：￥16.500

市场价：￥19.800

已售出 0 件 0 人评价

10-99PCS：: ￥15.800

100-999PCS：: ￥15.000

≥1000PCS：: ￥14.500

: 需求报价

商品货号 DHR000641
寿命周期在产
可使用400酷币

数量
- + PCS

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规格参数

产品名称 :	IPB011N04NG Infineon MOS场效应管 40V 180A
制造商 :	Infineon
品牌:	Infineon
封装:	TO-263-7
通道数量:	1 Channel
晶体管极性:	N-Channel
Vds-漏源极击穿电压:	40 V
Id-连续漏极电流:	180 A
Rds On-漏源导通电阻:	1.1 mOhms
Vgs - 栅极-源极电压:	20 V
Pd-功率耗散:	250 W
最小工作温度:	- 55 C
最大工作温度:	+ 175 C

产品介绍

IPB011N04NG Infineon MOS场效应管 40V 180A

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IPB011N04NG Infineon MOS场效应管 40V 180A

本店价：￥16.500

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