MEM2313SG_射频金属氧化物半导体场效应(RFMOSFET)晶体管_RF晶体管_晶体管_分立半导体

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分享商品：

制造商：南京微盟

南京微盟电子有限公司（以下简称“微盟电子”）创建于1999年，是一家专业从事模拟集成电路芯片产品研究、开发及销售的高新技术企业。我们的产品目前已广泛应用于信息家电、无线通信、数字通讯和网络技术等多重领域。微盟电子作为中国电子（CEC）旗下的主要IC设计企业，通过了国家首批“集成电路设计企业”认证，并先后获得省、市级“高新技术企业”认定。值得一提的是，华大半导体有限公司作为我们目前最大的股东方，为企业的发展不断提供优质平台和丰富资源。微盟电子致力于开发电源管理类产品，主要包括LDO系列，DC/DC系列、LED DRIVER、AC/DC系列、锂电管理、电压检测系列、数模混合系列、音频功放IC系列等，并为电子设备的主芯片及相关器件提供优质、稳定的电源解决方案。

制造商官网：进入官网

数据手册：

数据手册

MEM2313SG MEM2313SG P-Channel MOSFET MEM2313SG

本店价：￥0.560

市场价：￥0.670

已售出 0 件 0 人评价

10-19PCS：: ￥0.560

20-49PCS：: ￥0.530

50-99PCS：: ￥0.500

100-499PCS：: ￥0.450

500-999PCS：: ￥0.380

≥1000PCS：: ￥0.280

: 需求报价

商品货号 DHR002020
寿命周期在产
可使用0酷币

数量
- + PCS

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规格参数

产品名称 :	MEM2313SG
制造商 :	南京微盟
品牌:	南京微盟
封装:	SOP-8
Vds-漏源极击穿电压:	30 V
最小工作温度:	- 40 C
最大工作温度:	+ 150 C

产品介绍

General Description

MEM2313SG Series Dual P-channel enhancement mode field-effect transistor, produced with high cell density DMOS

trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage

applications, and low power dissipation.

Features

l 30V/-6A

RDS(ON) =52mΩ@ VGS=-10V,ID=-6A

RDS(ON) =67mΩ@ VGS=-4.5V,ID=-4A

l High Density Cell Design For Ultra Low On-Resistance

l Surface mount package:SOP8

Typical Application

l Power management

l Load switch

l Battery protection

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MEM2313SG

本店价：￥0.560

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