MT44K32M18RB-107E IT:B_动态随机存取存储器_存储器IC_集成电路_ICCOOL爱矽库电子元器件一站式采购平台

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制造商：micron（镁光）

美光科技推出的 6GB/8GB/12GB 容量低功率 DDR5 移动 DRAM 芯片为智能手机引入 5G 和 AI 应用铺平道路。与前几代 DDR 移动内存相比，新推出的 LPDDR5 产品将数据访问速度提高了 50%，功耗降低 20% 以上。这也是应用于量产智能手机的首款 LPDDR5。

制造商官网：进入官网

MT44K32M18RB-107E IT:B 动态随机存取存储器 RL动态随机存取存储器 3 576M 32MX18 BGA

本店价：￥140.100

市场价：￥168.110

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10-499PCS：: ￥119.830

500-999PCS：: ￥110.730

≥1000PCS：: ￥108.700

: 需求报价

商品货号 DHR004083
寿命周期在产
可使用4200酷币

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规格参数

产品名称 :	MT44K32M18RB-107E IT:B
制造商 :	micron（镁光）
型号:	MT44K32M18RB-107E IT:B
品牌:	micron
封装:	BGA-168
包装数量:	1190

产品介绍

MT44K32M18RB-107E IT:B

动态随机存取存储器 RL动态随机存取存储器 3 576M 32MX18 BGA

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MT44K32M18RB-107E IT:B

本店价：￥140.100

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产品介绍

动态随机存取存储器 RL动态随机存取存储器 3 576M 32MX18 BGA

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