MT53E256M32D2DS-046 AIT:B TR_动态随机存取存储器_存储器IC_集成电路

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制造商：micron（镁光）

美光科技推出的 6GB/8GB/12GB 容量低功率 DDR5 移动 DRAM 芯片为智能手机引入 5G 和 AI 应用铺平道路。与前几代 DDR 移动内存相比，新推出的 LPDDR5 产品将数据访问速度提高了 50%，功耗降低 20% 以上。这也是应用于量产智能手机的首款 LPDDR5。

制造商官网：进入官网

MT53E256M32D2DS-046 AIT:B TR 动态随机存取存储器动态随机存取存储器 LPDDR4 256MX32 WFBGA AIT

本店价：￥200.000

市场价：￥240.000

已售出 0 件 0 人评价

10-499PCS：: ￥170.000

500-999PCS：: ￥140.000

≥1000PCS：: ￥103.840

: 需求报价

商品货号 DHR004713
寿命周期在产
可使用6000酷币

数量
- + PCS

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规格参数

产品名称 :	MT53E256M32D2DS-046 AIT:B TR
制造商 :	micron（镁光）
型号:	MT53E256M32D2DS-046 AIT:B TR
品牌:	micron
封装:	WFBGA-200
包装数量:	2000
数据总线宽度:	32 bit
组织:	256 M x 32
存储容量:	8 Gbit

产品介绍

MT53E256M32D2DS-046 AIT:B TR

动态随机存取存储器动态随机存取存储器 LPDDR4 256MX32 WFBGA AIT

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本店价：￥200.000

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