IPD60R1K0CE Infineon MOS场效管 600V 6.8A_MOS场效应管_晶体管_分立半导体

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制造商：Infineon

制造商官网：进入官网

IPD60R1K0CE Infineon MOS场效管 600V 6.8A IPD60R1K0CE Infineon MOS场效管 600V 6.8A

本店价：￥3.100

市场价：￥3.710

已售出 0 件 0 人评价

10-99PCS：: ￥2.768

100-999PCS：: ￥2.222

≥1000PCS：: ￥2.122

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商品货号 DHR000574
寿命周期在产
可使用0酷币

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规格参数

产品名称 :	IPD60R1K0CE Infineon MOS场效管 600V 6.8A
制造商 :	Infineon
品牌:	Infineon
封装:	PG-TO-252-3
通道数量:	1 Channel
晶体管极性:	N-Channel
Vds-漏源极击穿电压:	600 V
Id-连续漏极电流:	6.8 A
Rds On-漏源导通电阻:	1 Ohms
Vgs - 栅极-源极电压:	10 V
Vgs th-栅源极阈值电压:	2.5 V
Qg-栅极电荷:	13 nC
Pd-功率耗散:	61 W
最小工作温度:	- 40 C
最大工作温度:	+ 150 C

产品介绍

IPD60R1K0CE Infineon MOS场效管 600V 6.8A

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IPD60R1K0CE Infineon MOS场效管 600V 6.8A

本店价：￥3.100

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