SPP11N80C3 Infineon MOS场效应管 800V 11A_MOS场效应管_晶体管_分立半导体

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制造商：Infineon

制造商官网：进入官网

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SPP11N80C3 Infineon MOS场效应管 800V 11A SPP11N80C3 Infineon MOS场效应管 800V 11A

本店价：￥19.500

市场价：￥23.400

已售出 0 件 0 人评价

10-99PCS：: ￥18.980

100-999PCS：: ￥18.280

≥1000PCS：: ￥18.200

: 需求报价

商品货号 DHR000642
寿命周期在产
可使用500酷币

数量
- + PCS

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规格参数

产品名称 :	SPP11N80C3 Infineon MOS场效应管 800V 11A
制造商 :	Infineon
品牌:	Infineon
封装:	PG-TO-220-3
通道数量:	1 Channel
晶体管极性:	N-Channel
Vds-漏源极击穿电压:	800 V
Id-连续漏极电流:	11 A
Rds On-漏源导通电阻:	450 mOhms
Vgs - 栅极-源极电压:	10 V
Vgs th-栅源极阈值电压:	2.1 V
Qg-栅极电荷:	64 nC
Pd-功率耗散:	156 W
最小工作温度:	- 55 C
最大工作温度:	+ 150 C

产品介绍

SPP11N80C3 Infineon MOS场效应管 800V 11A

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SPP11N80C3 Infineon MOS场效应管 800V 11A

本店价：￥19.500

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